STU10N60M2 データシートの表示（PDF） - STMicroelectronics

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STU10N60M2

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages

STMicroelectronics 

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Electrical characteristics

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

(1)

ISDM Source-drain current (pulsed)

-

(2)

VSD Forward on voltage

ISD = 7.5 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 7.5 A, di/dt = 100 A/μs

-

VDD = 60 V (see Figure 18)

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 7.5 A, di/dt = 100 A/μs

VDD = 60 V, Tj = 150 °C

-

(see Figure 18)

-

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

7.5 A

30 A

1.6 V

270

ns

2

μC

14.4

A

376

ns

2.8

μC

15

A

DocID024710 Rev 2

5/24

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