NAND04GW3C2N1E データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

NAND04GW3C2N1E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

NAND04GA3C2A, NAND04GW3C2A

Table 11. Electronic Signature Byte 3

I/O

Definition

I/O1-I/O0

Internal Chip number

I/O3-I/O2

Cell Type

I/O5-I/O4

Number of simultaneously

programmed pages

I/O7-I/O6

Reserved

Table 12. Electronic Signature Byte 4

I/O

Definition

I/O1-I/O0

Page size

(Without Spare Area)

Spare area size

I/O2

(Byte / 512 Byte)

I/O7, I/O3

Minimum sequential

access time

I/O5-I/O4

I/O6

Block size

(without Spare Area)

Organization

Value

00

01

10

11

00

01

10

11

00

01

10

11

10

Value

00

01

10

11

0

1

00

10

01

11

00

01

10

11

0

1

6 Device operations

Description

1

2

4

8

2-level cell

4-level cell

8-level cell

16-level cell

1

2

4

8

Description

1 KBytes

2 KBytes

Reserved

Reserved

8

16

50ns

30ns

Reserved

Reserved

64 KBytes

128 KBytes

256 KBytes

Reserved

x8

x16

27/51

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