NAND04GW3C2N1E データシートの表示（PDF） - STMicroelectronics

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NAND04GW3C2N1E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

11 Maximum rating

11 Maximum rating

NAND04GA3C2A, NAND04GW3C2A

Stressing the device above the ratings listed in Table 15: Absolute Maximum Ratings, may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality documents.

Table 15. Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Min

Max

TBIAS

Temperature Under Bias

– 50

125

°C

TSTG

Storage Temperature

– 65

150

°C

VIO(1)

1.8V, VDDQ devices

Input or Output Voltage

– 0.6

2.7

V

3 V, VDDQ devices

– 0.6

4.6

V

VDD

Supply Voltage

– 0.6

4.6

V

1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may

overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.

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