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NAND04GW3C2N1E データシートの表示(PDF) - STMicroelectronics
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NAND04GW3C2N1E
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
STMicroelectronics
NAND04GW3C2N1E Datasheet PDF : 51 Pages
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12 DC and AC parameters
NAND04GA3C2A, NAND04GW3C2A
Table 18. DC Characteristics, V
DDQ
3V Devices
(1)
Symbol
Parameter
Test Conditions
Min
I
DD1
Operating
Sequential
Read
t
RLRL
minimum
E=V
IL,
I
OUT
= 0 mA
-
I
DD2
Current
Program
-
-
I
DD3
Erase
-
-
I
DD4
Standby current (TTL)
E=V
IH
, WP=0/V
DD
I
DD5
Standby Current (CMOS)
E=V
DD
-0.2,
-
WP=0/V
DD
I
LI
Input Leakage Current
V
IN
= 0 to 3.6V
-
I
LO
Output Leakage Current
V
OUT
= 0 to 3.6V
-
V
IH
Input High Voltage
-
2.0
V
IL
Input Low Voltage
-
-0.3
V
OH
Output High Voltage Level
I
OH
= -400µA
2.4
V
OL
Output Low Voltage Level
I
OL
= 2.1mA
-
I
OL
(RB)
Output Low Current (RB)
V
OL
= 0.4V
8
1. DC Characteristics for V
DDQ
1.8V devices are still to be determined.
Typ
Max Unit
10
20
mA
20
30
mA
15
20
mA
1
mA
10
50
µA
-
±10
µA
-
±10
µA
-
V
DD
+0.3 V
-
0.8
V
-
-
V
-
0.4
V
10
mA
36/51
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