NAND04GW3C2N1E データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
NAND04GW3C2N1E Datasheet PDF : 51 Pages
| |||
NAND04GA3C2A, NAND04GW3C2A
12 DC and AC parameters
Table 19. AC Characteristics for Command, Address, Data Input, VDDQ 3V Devices(1)
Symbol Alt. Symbol
Parameter
3V I/O
tALLWH
tALHWH
tCLHWH
tCLLWH
tDVWH
tELWH
tWHALH
tWHALL
tWHCLH
tWHCLL
tWHDX
tWHEH
tWHWL
Address Latch Low to Write Enable High
tALS
AL Setup time Min 40
Address Latch High to Write Enable High
Command Latch High to Write Enable High
tCLS
CL Setup time Min 20
Command Latch Low to Write Enable High
tDS
Data Valid to Write Enable High
Data Setup time Min 20
tCS
Chip Enable Low to Write Enable High
E Setup time
Min 30
Write Enable High to Address Latch High
tALH
AL Hold time
Min 15
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
tCLH
CL hold time
Write Enable High to Command Latch Low
Min 10
tDH
Write Enable High to Data Transition
Data Hold time Min 15
tCH
Write Enable High to Chip Enable High
E Hold time
Min 10
tWH
Write Enable High to Write Enable Low
W High Hold
time
Min 20
tWLWH
tWP
Write Enable Low to Write Enable High
tWLWL
tWC
Write Enable Low to Write Enable Low
1. AC Characteristics for VDDQ 1.8V devices are still to be determined.
W Pulse Width Min 40
Write Cycle time Min 60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
37/51
Share Link: 