STU11N65M2 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

STU11N65M2

N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD11N65M2, STP11N65M2,

STU11N65M2

N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg

Power MOSFETs in DPAK, TO-220 and IPAK packages

Datasheet - preliminary data

TAB

3

1

DPAK

TAB

TAB

3

2

1

TO-220

3

2

1

IPAK

Figure 1. Internal schematic diagram

'7$%

Features

Order codes

STD11N65M2

STP11N65M2

STU11N65M2

VDS

RDS(on) max ID

650 V

0.67 Ω

7A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

*

6

AM01476v1

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

Order codes

STD11N65M2

STP11N65M2

STU11N65M2

Table 1. Device summary

Marking

Package

11N65M2

DPAK

TO-220

IPAK

Packaging

Tape and reel

Tube

May 2014

DocID026376 Rev 1

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

1/21

www.st.com

Share Link: