2N3904 データシートの表示（PDF） - Fairchild Semiconductor
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2N3904 Datasheet PDF : 12 Pages
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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
IBL
Base Cut-Off Current
VCE = 30 V, VEB = 3 V
ICEX
Collector Cut-Off Current
ON CHARACTERISTICS(5)
VCE = 30 V, VEB = 3 V
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC =100 mA, VCE = 1.0V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 100 kHz
NF
Noise Figure
IC = 100 μA, VCE = 5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 3.0 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1.0 mA
VCC = 3.0 V, IC = 10 mA,
IB1 = IB2 = 1.0 mA
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Min.
40
60
6.0
40
70
100
60
30
0.65
Max.
50
50
300
0.2
0.3
0.85
0.95
Unit
V
V
V
nA
nA
V
V
300
MHz
4.0
pF
8.0
pF
5.0
dB
35
ns
35
ns
200
ns
50
ns
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
3
www.fairchildsemi.com
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