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LNK6663E(2014) データシートの表示(PDF) - Power Integrations, Inc

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LNK6663E Datasheet PDF : 24 Pages
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Parameter
Symbol
Conditions
SOURCE = 0 V; TJ = -40 to 125 °C
(Unless Otherwise Specified)
Control Functions (cont.)
Transconductance
Amplifier Gain
gM
Transconductance
Amplifier Gain
ΔgM
Temperature Variation
Transconductance
Amplifier Max Output
IGM
Current
COMPENSATION Pin
Input Impedance
ZCP
Bypass (BP) Input
OVP/UVP/OTP
Programming
CBP
Capacitor Value
TJ = +25 °C
0 °C ≤ TJ ≤ +100 °C
See Note A
TJ = +25 °C
See Note A
TJ = +25 °C
See Table 3 for programming
BYPASS Pin Voltage
BYPASS Pin
Voltage Hysteresis
BYPASS Pin
Charge Current
BYPASS Pin Shutdown
Threshold Current
BYPASS Pin
Shutdown Delay
BYPASS Pin
Source Current
BYPASS Pin Charge
Current Temperature
Variation
BYPASS Pin
Shunt Voltage
BYPASS Pin
Supply Current
VBP
VBPH
ICH1
ICH2
IBPSD
IBPSC
ΔIBPSC
VBP = 0 V
TJ = +25 °C
VDS ≥ 50 V
VBP = 5 V
TJ = +25 °C
VDS ≥ 50 V
LNK6xx3
LNK6xx4-5
LNK6xx6-7
LNK6xx3
LNK6xx4-5
LNK6xx6-7
TJ = +25 °C
TJ = +25 °C
VBP = 6 V
TJ = +25 °C
See Note A
VBP(SHUNT)
IBPS1
IBPS2
IBP = 2 mA
TJ = +25 °C, See Note B
LNKxxx3
MOSFET switching
at fOSC
LNKxxx4
LNKxxx5
LNKxxx6
LNKxxx7
Min
95
10.0
30
5.46
0.85
-6.8
-9.2
-12.0
-4.7
-7.0
-8.8
5.7
6.1
Typ
115
12.5
0.47
4.7
47
5.75
0.95
-4.8
-6.6
-8.3
-2.7
-4.0
-5.2
8.2
8
0.5
6.4
0.9
1.0
1.1
1.3
1.4
Max
Units
125
μA/V
±20
%
15.0
μA
MW
mF
6.04
V
1.1
V
-2.0
-2.8
mA
-4.3
-1.5
-2.2
mA
-2.9
10.7
mA
Switching
Cycles
-0.5
mA
%/°C
6.7
V
525
mA
1.2
1.3
1.4
mA
1.6
1.7
www.powerint.com
13
Rev. C 03/14

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