NLAST44599DTR2G データシートの表示（PDF） - ON Semiconductor
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NLAST44599DTR2G Datasheet PDF : 12 Pages
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NLAST44599
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
tON
Turn−On Time
(Figures 12 and 13)
Test Conditions
RL = 300 W, CL = 35 pF
(Figures 5 and 6)
tOFF
Turn−Off Time
(Figures 12 and 13)
RL = 300 W, CL = 35 pF
(Figures 5 and 6)
tBBM
Minimum Break−Before−Make VIS = 3.0 V (Figure 4)
Time
RL = 300 W, CL = 35 pF
VCC VIS
(V) (V)
2.5 2.0
3.0 2.0
4.5 3.0
5.5 3.0
2.5 2.0
3.0 2.0
4.5 3.0
5.5 3.0
2.5 2.0
3.0 2.0
4.5 3.0
5.5 3.0
Guaranteed Maximum Limit
*555C to 255C
t855C t1255C
Min Typ* Max Min Max Min Max Unit
5
23 35 5 38 5 41 ns
5
16 24 5 27 5 30
2
11 16 2 19 2 22
2
9 14 2 17 2 20
1
7 12 1 15 1 18 ns
1
5 10 1 13 1 16
1
4
6 1 9 1 12
1
3
5 1 8 1 11
1
12
1
11
1
6
1
5
1
1
ns
1
1
1
1
1
1
*Typical Characteristics are at 25°C.
CIN
CNO or CNC
CCOM
C(ON)
Maximum Input Capacitance, Select Input
Analog I/O (Switch Off)
Common I/O (Switch Off)
Feedthrough (Switch On)
Typical @ 25, VCC = 5.0 V
8
pF
10
10
20
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC Typical
V
255C Unit
BW
Maximum On−Channel *3 dB Bandwidth or VIN = 0 dBm
Minimum Frequency Response
VIN centered between VCC and GND
(Figure 11)
(Figure 7)
3.0
145
MHz
4.5
170
5.5
175
VONL
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND
(Figure 7)
3.0
−3
dB
4.5
−3
5.5
−3
VISO
Off−Channel Isolation
(Figure 10)
f = 100 kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 7)
3.0
−93
dB
4.5
−93
5.5
−93
Q
THD
Charge Injection Select Input to Common I/O
(Figure 15)
VIN = VCC to GND, FIS = 20 kHz
tr = tf = 3 ns
RIS = 0 W, CL = 1000 pF
Q = CL * DVOUT (Figure 8)
3.0
1.5
pC
5.5
3.0
Total Harmonic Distortion
THD ) Noise
(Figure 14)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 W,
%
CL = 50 pF
VIS = 5.0 VPP sine wave
5.5
0.1
VCT
Channel to Channel Crosstalk
f = 100 kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 7)
dB
5.5
−90
3.0
−90
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