2PB709BRL データシートの表示（PDF） - NXP Semiconductors.
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2PB709BRL Datasheet PDF : 13 Pages
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NXP Semiconductors
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
3
1
2
1
2
sym013
3. Ordering information
Table 4. Ordering information
Type number
Package
Name Description
2PB709BRL
-
plastic surface-mounted package; 3 leads
2PB709BSL
4. Marking
Table 5. Marking codes
Type number
2PB709BRL
2PB709BSL
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
MN*
MP*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
tp ≤ 1 ms
Version
SOT23
Max Unit
−60
V
−50
V
−6
V
−200 mA
−250 mA
−200 mA
2PB709BRL_2PB709BSL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2010
© NXP B.V. 2010. All rights reserved.
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