AD1582(RevM) データシートの表示（PDF） - Analog Devices

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AD1582
(Rev.:RevM)

2.5 V to 5.0 V Micropower, Precision Series Mode Voltage References

Analog Devices 

Data Sheet

THEORY OF OPERATION

The AD1582/AD1583/AD1584/AD1585 use the band gap

concept to produce stable, low temperature coefficient voltage

references suitable for high accuracy data acquisition compo-

nents and systems. These parts of precision references use the

underlying temperature characteristics of a silicon transistor’s

base emitter voltage in the forward-biased operating region.

Under this condition, all such transistors have a −2 mV/°C

temperature coefficient (TC) and a VBE that, when extrapolated

to absolute zero, 0 K (with collector current proportional to

absolute temperature), approximates the silicon band gap voltage.

By summing a voltage that has an equal and opposite tempera-

ture coefficient of 2 mV/°C with the VBE of a forward-biased

transistor, an almost 0 TC reference can be developed. In the

AD1582/AD1583/AD1584/AD1585 simplified circuit diagram

shown in Figure 9, such a compensating voltage, V1, is derived

by driving two transistors at different current densities and

amplifying the resultant VBE difference (∆VBE, which has a positive

TC). The sum of VBE and V1 (VBG) is then buffered and amplified

to produce stable reference voltage outputs of 2.5 V, 3 V, 4.096 V,

and 5 V.

AD1582/AD1583/AD1584/AD1585

R3

+

VBE R2

–

R1

VIN

R4

VOUT

R5

VBG

R6

+

V1

–

GND

Figure 9. Simplified Schematic

Rev. M | Page 11 of 17

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