Q67000-S306 データシートの表示（PDF） - Infineon Technologies
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Q67000-S306 Datasheet PDF : 8 Pages
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Rev. 1.0
SIPMOS® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
BSP123
Product Summary
VDS
100 V
RDS(on)
6
Ω
ID
0.37 A
SOT223
Type
BSP123
Package
SOT223
Ordering Code Tape and Reel Information Marking
Q67000-S306 E6327: 1000 pcs/reel
BSP123
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.37A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
0.37
0.3
1.48
6
±20
Class 1
1.79
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-02-26
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