Q67000-S306 データシートの表示（PDF） - Infineon Technologies
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Q67000-S306 Datasheet PDF : 8 Pages
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Rev. 1.0
BSP123
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.37 A, VGS = 10 V
BSP123
24
Ω
20
18
16
14
12
10
8
98%
6
4
typ
2
0
-60 -20
20
60 100 °C
180
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
10 3
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS; ID =50µA
2.2
V
98%
1.8
1.6
1.4
typ.
1.2
1
2%
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
10 1 BSP123
pF
A
10 2
Ciss
10 0
Coss
10 1
Crss
10 0
0 4 8 12 16 20 24 28 V 36
VDS
Page 6
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6
2 2.4 V 3
VSD
2003-02-26
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