ACE2341BBM-H データシートの表示（PDF） - ACE Technology Co., LTD.

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ACE2341BBM-H

P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE2341B

P-Channel Enhancement Mode Field Effect Transistor

Description

The ACE2341B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and

operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general

applications.

Features

 VDS=-20V, ID=-4.1A

 RDS(ON)<65mΩ @ VGS=-4.5V

 RDS(ON)<85mΩ @ VGS=-2.5V

 RDS(ON)<125mΩ @ VGS=-1.8V

Absolute Maximum Ratings

Parameter

Symbol Max Unit

Drain-Source Voltage

VDS

-20 V

Gate-Source Voltage

VGS

±12 V

Drain Current (Continuous)

TA=25 OC

TA=70 OC

ID

-4.1

A

-3.2

Drain Current (Pulse)

IDM

-30 A

Power Dissipation

TA=25 OC

PD

1.4 W

Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC

Packaging Type

SOT-23-3L

3

1

2

SOT-23-3L Description

1

Gate

2

Source

3

Drain

Ordering information

D

G

S

ACE2341B XX + H

Halogen - free

Pb - free

BM : SOT-23-3L

VER 1.2 1

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