SST39VF1601 データシートの表示（PDF） - Silicon Storage Technology

部品番号

コンポーネント説明

メーカー

SST39VF1601

16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus

Silicon Storage Technology 

16 Mbit / 32 Mbit Multi-Purpose Flash Plus

SST39VF1601 / SST39VF3201

SST39VF1602 / SST39VF3202

Data Sheet

TABLE 11: DC Operating Characteristics VDD = 2.7-3.6V1

Limits

Symbol Parameter

IDD

Power Supply Current

Read3

Program and Erase

ISB

Standby VDD Current

IALP

Auto Low Power

ILI

Input Leakage Current

ILIW

Input Leakage Current

on WP# pin and RST#

Min

Max

Units Test Conditions

Address input=VILT/VIHT2, at f=5 MHz,

VDD=VDD Max

18

mA

CE#=VIL, OE#=WE#=VIH, all I/Os open

35

mA

CE#=WE#=VIL, OE#=VIH

20

µA

CE#=VIHC, VDD=VDD Max

20

µA

CE#=VILC, VDD=VDD Max

All inputs=VSS or VDD, WE#=VIHC

1

µA

VIN=GND to VDD, VDD=VDD Max

10

µA

WP#=GND to VDD or RST#=GND to VDD

ILO

Output Leakage Current

10

µA

VOUT=GND to VDD, VDD=VDD Max

VIL

Input Low Voltage

0.8

V

VDD=VDD Min

VILC

Input Low Voltage (CMOS)

0.3

V

VDD=VDD Max

VIH

Input High Voltage

0.7VDD

V

VDD=VDD Max

VIHC

Input High Voltage (CMOS)

VDD-0.3

V

VDD=VDD Max

VOL

Output Low Voltage

0.2

V

IOL=100 µA, VDD=VDD Min

VOH

Output High Voltage

VDD-0.2

V

IOH=-100 µA, VDD=VDD Min

1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C

(room temperature), and VDD = 3V. Not 100% tested.

2. See Figure 18

3. The IDD current listed is typically less than 2mA/MHz, with OE# at VIH. Typical VDD is 3V.

T11.8 1223

TABLE 12: Recommended System Power-up Timings

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Program/Erase Operation

100

µs

T12.0 1223

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 13: Capacitance (TA = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

CIN1

I/O Pin Capacitance

Input Capacitance

VI/O = 0V

VIN = 0V

12 pF

6 pF

T13.0 1223

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 14: Reliability Characteristics

Symbol

Parameter

Minimum Specification

Units

Test Method

NEND1,2

Endurance

10,000

Cycles

JEDEC Standard A117

TDR1

ILTH1

Data Retention

Latch Up

100

100 + IDD

Years

mA

JEDEC Standard A103

JEDEC Standard 78

T14.2 1223

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a

higher minimum specification.

©2008 Silicon Storage Technology, Inc.

13

S71223-05-000

6/08

Share Link: