LHF16KA7 データシートの表示（PDF） - Sharp Electronics

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LHF16KA7

Flash Memory 16M (2MB × 8/1MB × 16)

Sharp Electronics 

SHARP

_- =

LHFlGKA7

9

Mode

Read

Output Disable

Notes

1,2,3,9

3

Table 3. Bus Operations(BYTE#=V,Uj

RP# CE”# CE,# OE# WE# 1Address

v,w

V,,

V,,

V,,

V,H

X

V,H V,,

V,,

V,w V,H

X

v,,,

v 111

1 Vpp

X

X

1 DQnm15 1 STS

D&r

X

High Z X

jeep Power-Down

lead Identifier

Lodes

Query

Write

4

V,,

9

VI,

9

vlH

I

I

1 3,7&W 1 ‘.‘,H

X

%L

VI,

I

1 VII

X

%L

4,

I

1 VII

X

4,

VI,

I

1 VI’I

X

4,

vlH

I

1 VII

X

X

See

Figure 4

X

See Table x

7-11

I

X

1x

High Z High Z

Note 5 High Z

Note 6 High Z

1 DIN

Ix

VI,

V,w

Deep Power-Down

Read Identifier

Codes

Query

4

VI,

X

X

X

X

X

X High Z High Z

9

‘1,

VlL

VI,

YL

‘1,

See

Figure 4

X

Note 5 High Z

9

‘1,

VI,

VI,

VI,

SeeTable

vlH

7-11

x

Note 6 High Z

Write

3,7,8,9 VI,,

VII

VII

V,H VII

X

X

DIN

X

NOTES:

1. Refer to DC Characteristics. When V&f,,,,,

memory contents can be read, but not altered.

2. X can be V,, or VrH for control pins and addresses, and VP,,, or VPr+rt/2/s for V,,. See DC Characteristics for

bPLK and VPPH1/~3 voitagese

3. STS is V,, (if configured to RY/BY# mode) when the WSM is executing internal block erase, full chip erase,

(multi) word/byte write or block lock-bit configuration algorithms. It is floated during when the WSM is not busy,

in block erase suspend mode with (multi) word/byte write inactive, (multi) word/byte write suspend mode, or

deep power;down mode.

.

4. RP# at GN&O.2V ensures the lowest deep power-down current.

5. See Section 4.2 for read identifier code data.

6. See Section 4.5 for query data.

7. Command writes involving block erase, full chip erase, (multi) word/byte write or block lock-bit configuration are

reliably executed when Vpp=VPPH1/2/3

and Vcc=Vcc1~2.

8. Refer to Table 4 for valid D,, during a write operation.

9. Don’t use the timing both OE# and WE# are VI,.

,

Rev. 1.9

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