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2SK3766 データシートの表示(PDF) - Toshiba
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コンポーネント説明
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2SK3766
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)
Toshiba
2SK3766 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
2
COMMON
SOURCE
10
8.5
T
C
= 25℃
PULSE TEST
1.6
8.0
15
1.2
7.5
0.8
0.4
0
0
7.0
6.5
V
GS
= 6.0V
2
4
6
8
10
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
2SK3766
5
15
4
I
D
– V
DS
10
9.5
COMMON SOURCE
T
C
= 25℃
PULSE TEST
9.0
3
8.5
2
8.0
7.5
1
7.0
V
GS
= 6.0V
0
0
10
20
30
40
50
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
5
COMMON SOURCE
V
DS
= 20V
PULSE TEST
4
I
D
– V
GS
3
2
100
25
1
T
C
= -55℃
0
0
4
8
12
16
GATE
−
SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
10
COMMON SOURCE
T
C
= 25℃
PULSE TEST
8
6
4
I
D
= 2.0A
1.0
2
0.5
0
0
4
8
12
16
20
GATE
−
SOURCE VOLTAGE V
GS
(V)
10.0
COMMON SOURCE
V
DS
= 20V
PULSE TEST
⎪
Y
fs
⎪
– I
D
T
C
= -55℃
25
1.0
100
0.1
0.1
1
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
30
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
5
3
VGS
=
10, 15 V
1
0.5
10
0.1
0.3 0.5
1
35
10
DRAIN CURRENT I
D
(A)
3
2006-11-06
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