RH1013M データシートの表示（PDF） - Analog Devices

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RH1013M

Dual Precision Operational Amplifier

Analog Devices 

RH1013M

TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation)

VS = ±15V, VCM = 0V, unless otherwise noted.

SYMBOL PARAMETER

CONDITIONS

TA = 25°C

SUB- –55°C ≤ TA ≤ 125°C SUB-

NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS

VOS

Input Offset Voltage

300 1

550 2,3

µV

2

450 1

750 3

µV

VCM = 0.1V

750 2

µV

∆VOS Average Tempco of

1

∆Temp Offset Voltage

2.5

µV/°C

∆VOS Long Term VOS Stability

0.5

∆Time

µV/Mo

IOS

Input Offset Current

10

1

20 2,3

nA

2

10

1

20 2,3

nA

IB

Input Bias Current

30

1

45 2,3

nA

2

50

1

120 2,3

nA

en

Input Noise Voltage

0.1Hz to 10Hz

0.55

Input Noise Voltage

fO = 10Hz

24

Density

fO = 1000Hz

22

in

Input Noise Current

fO = 10Hz

0.07

Density

µVP-P

nV/√Hz

nV/√Hz

pA/√Hz

RIN

Input Resistance

Differential

1

70

MΩ

Common Mode

4

GΩ

AVOL Large-Signal Voltage VO = ±10V, RL ≥ 2k

1.2

Gain

VO = ±10V, RL ≥ 600Ω

0.5

VO = 5mV to 4V, RL = 500Ω 2

1

4 0.25

4

5,6 V/µV

V/µV

V/µV

Input Voltage Range

1 13.5

V

1 –15.0

V

1,2

3.5

V

1,2

0

V

CMRR Common-Mode

VCM = 13.5V, –15V

97

Rejection Ratio

VCM = 13V, –14.9V

1

94

dB

2,3

dB

PSRR Power Supply Rejection VS = ± 2V to ±18V

100

Ratio

1

97

2,3

dB

Channel Separation

VO = ±10V, RL = 2k

VOUT Output Voltage Swing RL ≥ 2k

Output Low, No Load

120

±12.5

2

1

4 ±11.5

25

4

dB

5,6

V

mV

Output Low, 600Ω to GND

2

10

4

18 5,6

mV

Output Low, ISINK = 1mA

2

350 4

mV

Output High, No Load

2 4.0

4

V

Output High, 600Ω to GND

2

3.4

4

3.1

5,6

V

SR

Slew Rate

0.2

4

V/µs

IS

Supply Current

Per Amplifier

0.55 1

0.70 2,3

mA

2

0.50 1

0.65 2,3

mA

Rev. F

2

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