2SA746 データシートの表示（PDF） - New Jersey Semiconductor
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2SA746 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, {Jnc,
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA746
DESCRIPTION
• High Power Dissipation-
: Pc= 100W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
• Complement to Type 2SC1115
APPLICATIONS
• Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
-4
A
100
W
150
-C
-65-150
°c
PIN 1.BASE
•2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
J\ /"*
1 ^vl / *
B
nun
DIM MIN MAX
A
3900
e 25.30 56,67-
c
7.3O
8.50
D
0.90
HO
E
1.40
1 60
<?
1092
H
546
K
1110 1350
L 16.75 1705
N 1940 1962
Qu
400 420
3000 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I kmevcr. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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