IRF1310S データシートの表示（PDF） - International Rectifier

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IRF1310S

HEXFET® Power MOSFET

International Rectifier 

IRF1310S

1000

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

1000

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

100

10

4.5V

20µs PULSE WIDTH

1

TC = 25°C

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics,

TC = 25oC

1000

TJ = 25°C

100

TJ = 1 7 5°C

10

V DS = 50V

20µs PULSE WID TH

1

4

5

6

7

8

9

10

VGS , Gate-to-Source V oltage (V)

Fig 3. Typical Transfer Characteristics

10

4.5V

20µs PULSE WIDTH

1

TC = 175°C

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics,

TC = 175oC

3.0

ID = 25A

2.5

2.0

1.5

1.0

0.5

0.0

VGS = 10V

-6 0 -4 0 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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