MMSF10N03Z データシートの表示（PDF） - ON Semiconductor

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MMSF10N03Z

Power MOSFET 10 Amps, 30 Volts

ON Semiconductor 

MMSF10N03Z

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

Gate−to−Source Voltage − Continuous

Drain Current − Continuous @ TA = 25°C (Note 1)

Drain Current − Continuous @ TA = 70°C (Note 1)

Drain Current − Pulsed Drain Current (Note 3)

Total Power Dissipation @ TA = 25°C (Note 1)

Linear Derating Factor @ TA = 25°C (Note 1)

Total Power Dissipation @ TA = 25°C (Note 2)

Linear Derating Factor @ TA = 25°C (Note 2)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 W)

Symbol

VDSS

VDGR

VGS

ID

ID

IDM

PD

PD

TJ, Tstg

EAS

Max

30

30

± 20

10

7.7

50

2.5

20

1.6

12

− 55 to

150

1000

Unit

Vdc

Vdc

Vdc

Adc

Watts

mW/°C

Watts

mW/°C

°C

mJ

THERMAL RESISTANCE

Parameter

Symbol

Typ

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJA

−

−

1. When mounted on 1″ square FR4 or G−10 board (VGS = 10 V, @ 10 seconds).

2. When mounted on minimum recommended FR4 or G−10 board (VGS = 10 V, @ Steady State).

3. Repetitive rating; pulse width limited by maximum junction temperature.

Max

Unit

50

°C/W

80

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