MMSF10N03Z データシートの表示（PDF） - ON Semiconductor

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MMSF10N03Z

Power MOSFET 10 Amps, 30 Volts

ON Semiconductor 

MMSF10N03Z

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0) (Notes 4 & 6)

V(BR)DSS

30

−

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

−

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk ≥ 2.0) (Notes 4 & 6)

VGS(th)

(VDS = VGS, ID = 0.25 mAdc)

1.0

Threshold Temperature Coefficient (Negative)

−

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 10 Adc)

(VGS = 4.5 Vdc, ID = 5.0 Adc)

(Cpk ≥ 2.0) (Notes 4 & 6)

RDS(on)

−

−

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) (Note 4)

gFS

7.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

Coss

−

Crss

−

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VDD = 25 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω) (Note 4)

Gate Charge

See Figure 8

(VDS = 15 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc) (Note 4)

td(on)

−

tr

−

td(off)

−

tf

−

QT

−

Q1

−

Q2

−

Q3

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 10 Adc, VGS = 0 Vdc) (Note 4)

VSD

(IS = 10 Adc, VGS = 0 Vdc,

TJ = 125°C)

−

−

Reverse Recovery Time

trr

−

(IS = 2.3 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs) (Note 4)

ta

−

tb

−

Reverse Recovery Stored Charge

QRR

−

4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.

6. Reflects typical values.

Max limit − Typ

Cpk =

3 x SIGMA

Typ

Max

Unit

Vdc

−

−

65

−

mV/°C

μAdc

−

1.0

−

10

−

3.0

μAdc

Vdc

1.2

1.7

3.5

−

mV/°C

mΩ

10

13

13

18

13

−

Mhos

720

1010

pF

570

800

78

110

35

70

ns

105

210

970

1940

550

1100

46

64

nC

3.8

−

11

−

8.1

−

0.80

1.1

Vdc

0.70

−

460

−

ns

180

−

280

−

4.2

−

μC

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