MMSF10N03Z データシートの表示（PDF） - ON Semiconductor
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MMSF10N03Z Datasheet PDF : 11 Pages
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MMSF10N03Z
di/dt = 300 A/μs
Standard Cell Density
trr
High Cell Density
trr
tb
ta
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) − TC)/(RθJC).
A power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non−linearly with an increase of peak current in avalanche
and peak junction temperature.
100
100 mS
10
1.0 ms
1.0 VGS = 10 V
SINGLE PULSE
TC = 25°C
10 ms
0.1
0.01
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
1000
VDS = 30 V
800
VGS = 10 V
IL = 10 Apk
L = 20 mH
600
400
200
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
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