2N120BND データシートの表示（PDF） - Fairchild Semiconductor

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2N120BND

12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor 

HGTP2N120BND, HGT1S2N120BNDS

Typical Performance Curves Unless Otherwise Specified (Continued)

TJ = 150oC, RG = 51Ω, L = 5mH, VCE = 960V

25

40

VCE = 840V, RG = 51Ω, TJ = 125oC

TC = 75oC, VGE = 15V, IDEAL DIODE

20

100

TC VGE

50

7755ooCC

15V

12V

15

35

tSC

ISC

30

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

fMAX2 = (PD - PC) / (EON + EOFF)

PC = CONDUCTION DISSIPATION TC VGE

(DUTY FACTOR = 50%)

10 RØJC = 1.2oC/W, SEE NOTES

110oC 15V

110oC 12V

0.5

1.0

2.0

5.0

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

10

25

5

20

12

13

14

15

VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

10

8

6

TC = -55oC

TC = 25oC

4

TC = 150oC

2

DUTY CYCLE < 0.5%, VGE = 12V

PULSE DURATION = 250µs

0

0

1

2

3

4

5

6

7

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE

10

TC = -55oC

8

TC = 25oC

6

TC = 150oC

4

2

DUTY CYCLE < 0.5%, VGE = 15V

PULSE DURATION = 250µs

0

0

1

2

3

4

5

6

7

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

2.0

RG = 51Ω, L = 5mH, VCE = 960V

1.5

TJ = 150oC, VGE = 12V, VGE = 15V

1.0

0.5

TJ = 25oC, VGE = 12V, VGE = 15V

0

0

1

2

3

4

5

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

400

RG = 51Ω, L = 5mH, VCE = 960V

350

300

TJ = 150oC, VGE = 12V OR 15V

250

200

150

TJ = 25oC, VGE = 12V OR 15V

100

50

00

1

2

3

4

5

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

©2001 Fairchild Semiconductor Corporation

HGTP2N120BND, HGT1S2N120BNDS Rev. B

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