2N120BND データシートの表示（PDF） - Fairchild Semiconductor
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2N120BND
Fairchild Semiconductor
2N120BND Datasheet PDF : 8 Pages
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HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
45
RG = 51Ω, L = 5mH, VCE = 960V
40 TJ = 25oC, TJ = 150oC, VGE = 12V
35
30
25
20
15 0
TJ = 25oC, TJ = 150oC, VGE = 15V
1
2
3
4
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
RG = 51Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
5
TJ = 25oC OR TJ = 150oC, VGE = 15V
0
0
1
2
3
4
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
450
RG = 51Ω, L = 5mH, VCE = 960V
400
350
300
VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
VGE = 12V, VGE = 15V, TJ = 25oC
100
0
1
2
3
4
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
30
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
25
20
15
10
TC = 25oC
5
TC = 150oC
TC = -55oC
0
7
8
9
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
400
RG = 51Ω, L = 5mH, VCE = 960V
350
300
250
TJ = 150oC, VGE = 12V OR 15V
200
150
100
TJ = 25oC, VGE = 12V OR 15V
50
0
1
2
3
4
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
IG (REF) = 1mA, RL = 260Ω, TC = 25oC
15
VCE = 1200V
10
VCE = 400V
VCE = 800V
5
0
0
5
10
15
20
25
30
35
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTP2N120BND, HGT1S2N120BNDS Rev. B
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