C5900 データシートの表示（PDF） - Inchange Semiconductor

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C5900

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5900

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB= 1A

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

ICES

Collector Cutoff Current

VCE= 1700V ; RBE= 0

IEBO

Emitter Cutoff Current

VEB= 4V ; IC= 0

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

800

V

3.0 V

1.5 V

10 μA

1.0 mA

10 mA

10

hFE-2

DC Current Gain

tstg

Storage Time

IC=4.5A ; VCE= 5V

4

IC= 3A ;IB1=0.5A; IB2= -1.5A

9

3.0 μs

tf

Fall Time

IC= 3A ;IB1=0.5A; IB2= -1.5A

0.2 μs

isc website：www.iscsemi.cn

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