2N4909 データシートの表示（PDF） - New Jersey Semiconductor

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2N4909

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

2N4909

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -200mA ; IB= 0

VcE(sat)

Collector-Emitter Saturation Voltage lc= -4A; IB= -0.4A

VeE(sat)

Base-Emitter Saturation Voltage

lc= -4A; IB- -0.4A

VfiE(on)

Base-Emitter On Voltage

lc= -4A; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -80V; IB= 0

ICBO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VOB= -80V; IE= 0

i

VCE= -80V; VBEfoffr -1.5V

VCE= -80V; VBE<off)= -1-5V, TC=150°C

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc= -4A; VCE= -4V

hFE-2

DC Current Gain

lc=-10A;VCE=-4V

fr

Current-Gain—Bandwidth Product

lc= -1A; VCE= -10V; ftest= 1.0MHz

MIN MAX UNIT

-80

V

-0.75

V

-1.5

V

-1.5

V

-1.0

mA

-0.1

mA

-0.1

-2.0

mA

-1.0

mA

20

80

5

4

MHz

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