TIP135 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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TIP135 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Darlington Power Transistor
TIP135
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB= -30mA
VBE(on) Base-Emitter On Voltage
IC= -4A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -60V, IE= 0
ICEO
Collector Cutoff Current
VCE= -30V, IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -4A; VCE= -4V
MIN
MAX UNIT
-60
V
-2.0
V
-3.0
V
-2.5
V
-0.2
mA
-0.5
mA
-5
mA
500
1000 15000
SPTECH website：www.superic-tech.com
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