2SD909 データシートの表示（PDF） - Inchange Semiconductor
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2SD909 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD909
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High Current Capability
·Good Linearity of hFE
·High Reliability
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio amplifier
·Series regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
80
W
150
℃
-55~150 ℃
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