BF992 データシートの表示（PDF） - NXP Semiconductors.
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BF992 Datasheet PDF : 9 Pages
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NXP Semiconductors
Silicon N-channel dual gate MOS-FET
Product specification
BF992
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air note 1
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
VALUE
460
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
±V(BR)G1-SS
±V(BR)G2-SS
−V(P)G1-S
−V(P)G2-S
±IG1-SS
±IG2-SS
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
gate 1 cut-off current
gate 2 cut-off current
CONDITIONS
VG2-S = VDS = 0; IG1-SS = ±10 mA
VG1-S = VDS = 0; IG2-SS = ±10 mA
VG2-S = 4 V; VDS = 10 V; ID = 20 µA
VG1-S = 0; VDS = 10 V; ID = 20 µA
VG2-S = VDS = 0; VG1-S = ±7 V
VG1-S = VDS = 0; VG2-S = ±7 V
MIN.
8
8
0.2
0.2
−
−
MAX.
20
20
1.3
1.1
25
25
UNIT
V
V
V
V
nA
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
20
25
f = 1 MHz
−
4
f = 1 MHz
−
1.7
f = 1 MHz
−
2
f = 1 MHz
−
30
f = 200 MHz; GS = 2 mS
−
1.2
MAX.
−
−
−
−
40
−
UNIT
mS
pF
pF
pF
fF
dB
Rev. 04 - 21 November 2007
4 of 9
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