ISC1862 データシートの表示（PDF） - Inchange Semiconductor

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ISC1862

Silicon NPN RF Transistor

Inchange Semiconductor 

isc Silicon NPN RF Transistor

INCHANGE Semiconductor

ISC1862

DESCRIPTION

·Collector Current :IC= 100mA

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 12V(Min)

·High gain:

︱ S21e ︱ 2 = 11 dB (typical) ( IC=20mA,f=1GHz)

·Gain bandwidth product:

fT = 7 GHZ (typical) (IC=20mA)

APPLICATIONS

·Designed for VHF, UHF and CATV high frequency

wideband low noise amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

3.0

V

IC

Collector Current-Continuous

100

mA

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademar

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