HGT1S2N120CN データシートの表示（PDF） - Fairchild Semiconductor
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HGT1S2N120CN Datasheet PDF : 9 Pages
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Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified
Symbol
Parameter
HGTP2N120CN
HGT1S2N120CN
Units
BVCES
IC25
IC110
ICM
VGES
VGEM
SSOA
PD
EAV
tJ, TSTG
TL
TPKG
tSC
Collector to Emitter Voltage
Collector Current Continuous
At TC = 25°C
At TC = 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching SOA Operating Area at TJ = 150°C (Figure 2)
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
Forward Voltage Avalanche Energy (Note 2)
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, see Tech Brief 334
Short Circuit Withstand Time (Note 3) at VGE = 15V
1200
13
7
20
±20
±30
13A at 1200V
104
0.83
18
-55 to 150
300
260
8
V
A
A
A
V
V
W
W/°C
mJ
°C
°C
°C
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied.
Notes:
1. Pulse width limited by maximum junction temperature.
2. ICE = 3A, L = 4mH
3. VCE(PK) = 840V, TJ = 125°C, RG = 51Ω.
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage IC = 10mA, VGE = 0V
15
-
-
V
Collector to Emitter Leakage Current
VCE = 1200V
TJ = 25°C
-
-
100
µA
TJ = 125°C
-
100
-
µA
TJ = 150°C
-
-
1.0
mA
Collector to Emitter Saturation Voltage
IC = 2.6A,
VGE = 15V
TJ = 25°C
TJ = 150°C
-
2.05 2.40
V
-
2.75 3.50
V
Gate to Emitter Threshold Voltage
IC = 45µA, VCE = VGE
6.4 6.7
-
V
Gate to Emitter Leakage Current
VGE = ±20V
-
-
±250 nA
Switching SOA
TJ = 150°C, RG = 51Ω, VGE = 15V
13
-
-
A
L = 5mH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
IC = 2.6A, VCE = 600V
-
10.2
-
V
On-State Gate Charge
IC = 2.6A,
VCE = 600V
VGE = 15V
VGE = 20V
-
30
36
nC
-
36
43
nC
2
HGTP2N120CN, HGT1S2N120CN Rev. C
www.fairchildsemi.com
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