MAX6880 データシートの表示（PDF） - Maxim Integrated

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MAX6880

Dual-/Triple-Voltage, Power-Supply Sequencers/Supervisors

Maxim Integrated 

Dual-/Triple-Voltage, Power-Supply

Sequencers/Supervisors

Applications Information

MOSFET Selection

The external pass MOSFET is connected in series with

the sequenced power-supply source. Since the load

current and the MOSFET drain-to-source impedance

(RDS) determine the voltage drop, the on characteris-

tics of the MOSFET affect the load supply accuracy.

The MAX6880–MAX6883 fully enhance the external

MOSFET out of its linear range to ensure the lowest

drain-to-source on-impedance. For highest supply

accuracy/lowest voltage drop, select a MOSFET with

an appropriate drain-to-source on-impedance with a

gate-to-source bias of 4.5V to 6.0V.

Layout and Bypassing

For better noise immunity, bypass each of the IN_

inputs to GND with 0.1µF capacitors installed as close

to the device as possible. Bypass ABP to GND with a

1µF capacitor installed as close to the device as possi-

ble. ABP is an internally generated voltage and must

not be used to supply power to external circuitry.

PART

MAX6880

MAX6881

MAX6882

MAX6883

CHANNEL

3

3

2

2

TIMEOUT

SELECTABLE

Yes

No

Yes

No

PG/RST

Yes

No

Yes

No

Selector Guide

MARGIN

Yes

No

Yes

No

PG THRESHOLD

VOLTAGE (%)

92.5

—

92.5

—

PROCESS: BiCMOS

Chip Information

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