MT46V128M4 データシートの表示（PDF） - Micron Technology

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MT46V128M4

Double Data Rate (DDR) SDRAM

Micron Technology 

512Mb: x4, x8, x16 DDR SDRAM

Electrical Specifications – DC and AC

Electrical Specifications – DC and AC

Stresses greater than those listed in Table 9 may cause permanent damage to the device.

This is a stress rating only, and functional operation of the device at these or any other

conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may

affect reliability.

Table 9: Absolute Maximum Ratings

Parameter

VDD supply voltage relative to VSS

VDDQ supply voltage relative to VSS

VREF and inputs voltage relative to VSS

I/O pins voltage relative to VSS

Storage temperature (plastic)

Short circuit output current

Min

–1V

–1V

–1V

–0.5V

–55

–

Max

+3.6V

+3.6V

+3.6V

VDDQ + 0.5V

+150

50

Units

V

V

V

V

°C

mA

Table 10: DC Electrical Characteristics and Operating Conditions (-5B)

Notes: 1–5 and 17 apply to the entire table; Notes appear on page 35; VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V

Parameter/Condition

Supply voltage

I/O supply voltage

I/O reference voltage

I/O termination voltage (system)

Input high (logic 1) voltage

Input low (logic 0) voltage

Input leakage current:

Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.35V

(All other pins not under test = 0V)

Output leakage current:

(DQ are disabled; 0V ≤ VOUT ≤ VDDQ)

Full-drive option output

levels (x4, x8, x16):

High current (VOUT =

VDDQ - 0.373V, minimum

VREF, minimum VTT)

Low current (VOUT =

0.373V, maximum VREF,

maximum VTT)

Reduced-drive option

output levels:

High current (VOUT =

VDDQ - 0.373V, minimum

VREF, minimum VTT)

Low current (VOUT =

0.763V, maximum VREF,

maximum VTT)

Ambient operating

temperatures

Commercial

Industrial

Automotive

Symbol

VDD

VDDQ

VREF

VTT

VIH(DC)

VIL(DC)

II

IOZ

IOH

IOL

IOHR

IOLR

TA

TA

TA

Min

+2.5

+2.5

0.49 × VDDQ

VREF - 0.04

VREF + 0.15

–0.3

–2

–5

–16.8

+16.8

–9

+9

0

–40

–40

Max

+2.7

+2.7

0.51 × VDDQ

VREF + 0.04

VDD + 0.3

VREF - 0.15

+2

+5

–

–

–

–

+70

+85

+105

Units

V

V

V

V

V

V

µA

Notes

37, 42

37, 42, 45

7, 45

8, 45

29

29

µA

mA

38, 40

mA

mA

39, 40

mA

°C

°C

°C

PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a

DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN

18

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000 Micron Technology, Inc. All rights reserved.

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