MT46V128M4 データシートの表示（PDF） - Micron Technology

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MT46V128M4

Double Data Rate (DDR) SDRAM

Micron Technology 

Figure 10: Input Voltage Waveform

VDDQ (2.3V MIN)

512Mb: x4, x8, x16 DDR SDRAM

Electrical Specifications – DC and AC

VOH (MIN) (1.670V1 for SSTL_2 termination)

System noise margin (power/ground,

crosstalk, signal integrity attenuation)

1.560V

VIH(AC)

1.400V

1.300V

1.275V

1.250V

1.225V

1.200V

1.100V

VIH(DC)

VREF + AC noise

VREF + DC error

VREF - DC error

VREF - AC noise

VIL(DC)

0.940V

VIN(AC) - provides margin

between VOL (MAX)

and VIL(AC)

VOL (MAX) (0.83V2 for SSTL_2

termination)

Receiver

VIL(AC)

Transmitter

Notes:

VssQ

1. VOH (MIN) with test load is 1.927V.

2. VOL (MAX) with test load is 0.373V.

3. Numbers in diagram reflect nominal values utilizing circuit below for all devices other than

-5B.

VTT

25Ω

25Ω

Reference

point

PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a

DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN

20

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000 Micron Technology, Inc. All rights reserved.

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