DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

81080V データシートの表示(PDF) - Lattice Semiconductor

部品番号
コンポーネント説明
メーカー
81080V Datasheet PDF : 26 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Specifications ispLSI 81080V
Absolute Maximum Ratings 1,2
Supply Voltage Vcc .................................. -0.5 to +5.4V
Input Voltage Applied ............................... -0.5 to +5.6V
Tri-Stated Output Voltage Applied ........... -0.5 to +5.6V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the Absolute Maximum Ratingsmay cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
DC Recommended Operating Condition
SYMBOL
VCC
VCCIO
Supply Voltage
I/O Supply Voltage
PARAMETER
Commercial TA = 0°C to 70°C
MIN.
3.0
2.3
MAX. UNITS
3.6
V
3.6
V
Table 2-0005/81080V
Capacitance (TA=25°C,f=1.0 MHz)
SYMBOL
C1
C2
C3
PARAMETER
I/O Capacitance
Clock Capacitance
Global Input Capacitance
TYPICAL
10
10
10
UNITS
pf
pf
pf
TEST CONDITIONS
VCC = 3.3V, VI/O = 2.0V
VCC = 3.3V, VCK = 2.0V
VCC = 3.3V, VG = 2.0V
Table 2-0006/81080V
Erase/Reprogram Specification
PARAMETER
Erase/Reprogram Cycles
MINIMUM
10000
MAXIMUM
UNITS
Cycles
Table 2-0008/81080V
11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]