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NAND512-A2C データシートの表示(PDF) - Numonyx -> Micron

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NAND512-A2C Datasheet PDF : 51 Pages
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Device operations
NAND512-A2C
Figure 7. Pointer operations for programming
AREA A
I/O
00h 80h
Address
Inputs
Data Input 10h
00h 80h
Address
Inputs
Data Input 10h
Areas A, B, C can be programmed depending on how much data is input. Subsequent 00h commands can be omitted.
AREA B
I/O
01h 80h
Address
Inputs
Data Input 10h
01h 80h
Address
Inputs
Data Input 10h
Areas B, C can be programmed depending on how much data is input. The 01h command must be re-issued before each program.
AREA C
I/O
50h 80h
Address
Inputs
Data Input 10h
50h 80h
Address
Inputs
Data Input 10h
Only Areas C can be programmed. Subsequent 50h commands can be omitted.
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6.2
6.2.1
Read Memory Array
Each operation to read the memory area starts with a pointer operation as shown in the
Section 6.1: Pointer operations. Once the area (main or spare) has been selected using the
Read A, Read B or Read C commands four bus cycles (for 512Mb and 1Gb devices) or
three bus cycles (for 128Mb and 256Mb devices) are required to input the address (refer to
Table 6 and Table 7) of the data to be read.
The device defaults to Read A mode after power-up or a Reset operation.
When reading the spare area addresses:
A0 to A3 (x8 devices)
A0 to A2 (x16 devices)
are used to set the start address of the spare area while addresses:
A4 to A7 (x8 devices)
A3 to A7 (x16 devices)
are ignored.
Once the Read A or Read C commands have been issued they do not need to be reissued
for subsequent read operations as the pointer remains in the respective area. However, the
Read B command is effective for only one operation, once an operation has been executed
in Area B the pointer returns automatically to Area A and so another Read B command is
required to start another read operation in Area B.
Once a read command is issued two types of operations are available: Random Read and
Page Read.
Random Read
Each time the command is issued the first read is Random Read.
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