Numonyx™ StrataFlash® Wireless Memory (L18)
7.2
Capacitance
Table 12: Capacitance Table
Symbol
Parameter
Signals
Min Typ
Address, CE#,
CIN
Input Capacitance
WE#, OE#,
RST#, CLK,
2
6
ADV#, WP#
COUT
Output Capacitance
Data, WAIT
2
4
Notes:
1.
Sampled, not 100% tested.
2.
Silicon die capacitance only, add 1 pF for discrete packages.
Max
7
5
Unit
pF
pF
Condition
Typ temp= 25 °C,
Max temp = 85 °C,
VCC=VCCQ=(0-1.95) V,
Silicon die
Note
1,2
7.3
AC Read Specifications (VCCQ = 1.35 V – 2.0 V)
Table 13: AC Read Specification Table, 1.35 V to 2.0 V (Sheet 1 of 2)
Num
Symbol
Asynchronous Specifications
Parameter
All
DensitiesSpeed
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
tAVAV
tAVQV
tELQV
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
Read cycle time
Address to output valid
CE# low to output valid
OE# low to output valid
RST# high to output valid
CE# low to output in low-Z
OE# low to output in low-Z
CE# high to output in high-Z
OE# high to output in high-Z
Output hold from first occurring address, CE#, or OE#
change
R11
R12
R13
R15
R16
R17
tEHEL
tELTV
tEHTZ
tGLTV
tGLTX
tGHTZ
CE# pulse width high
CE# low to WAIT valid
CE# high to WAIT high Z
OE# low to WAIT valid
OE# low to WAIT in low-Z
OE# high to WAIT in high-Z
Latching Specifications
R101
R102
R103
R104
R105
R106
R108
tAVVH
tELVH
tVLQV
tVLVH
tVHVL
tVHAX
tAPA
Address setup to ADV# high
CE# low to ADV# high
ADV# low to output valid
ADV# pulse width low
ADV# pulse width high
Address hold from ADV# high
Page address access
–90
Min
Max
Units Notes
90
-
ns
-
90
ns
6
-
90
ns
-
25
ns
1,2
-
150
ns
1
0
-
ns
1,3
0
-
ns 1,2,3
-
20
ns
-
20
ns
1,3
0
-
ns
17
-
ns
1
-
17
ns
1
-
17
ns
1,3
-
17
ns
1
0
-
ns
1,3
-
20
ns
1,3
7
-
ns
10
-
ns
-
90
ns
1
7
-
ns
7
-
ns
7
-
ns
1,4
-
30
ns
1
November 2007
251902-12
Datasheet
27