M29F100 データシートの表示（PDF） - STMicroelectronics
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M29F100 Datasheet PDF : 30 Pages
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M29F100T, M29F100B
Table 14. Read AC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F100T / M29F100B
Symbol Alt
Parameter
-70
-90
-120
Test Condition VCC = 5V ± 5% VCC = 5V ± 10% VCC = 5V ± 10% Unit
High Speed
Interface
Standard
Interface
Standard
Interface
Min Max Min Max Min Max
tAVAV
tRC
Address Valid to
Next Address Valid
E = VIL, G = VIL
70
90
120
ns
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
70
90
120 ns
tELQX (1)
tLZ
Chip Enable Low to
Output Transition
G = VIL
0
0
0
ns
tELQV (2)
tCE
Chip Enable Low to
Output Valid
G = VIL
70
90
120 ns
tGLQX (1)
tOLZ
Output Enable Low
to Output Transition
E = VIL
0
0
0
ns
tGLQV (2)
tOE
Output Enable Low
to Output Valid
E = VIL
30
35
50 ns
tEHQX
tOH
Chip Enable High to
Output Transition
G = VIL
0
0
0
ns
tEHQZ (1)
tHZ
Chip Enable High to
Output Hi-Z
G = VIL
20
20
30 ns
tGHQX
tOH
Output Enable High
to Output Transition
E = VIL
0
0
0
ns
tGHQZ (1)
tDF
Output Enable High
to Output Hi-Z
E = VIL
20
20
30 ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
0
0
0
ns
tPLYH (1,3)
tRRB RP Low to Read
tREADY Mode
tPHEL
tRH
RP High to Chip
Enable Low
10
10
10 µs
50
50
50
ns
tPLPX
tRP RP Pulse Width
500
500
500
ns
tELBL
tELBH
tELFL
tELFH
Chip Enable to BYTE
Switching Low or
High
5
5
5
ns
tBLQZ
BYTE Switching Low
tFLQZ to Output
High Z
30
40
40 ns
tBHQV
BYTE Switching
tFHQV High to Output
Valid
30
40
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
40 ns
14/30
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