M29F100 データシートの表示（PDF） - STMicroelectronics
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M29F100 Datasheet PDF : 30 Pages
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M29F100T, M29F100B
Table 15. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F100T / M29F100B
Symbol Alt
Parameter
-70
-90
-120
VCC = 5V ± 5% VCC = 5V ± 10% VCC = 5V ± 10%
High Speed
Interface
Standard
Interface
Standard
Interface
Unit
Min Max Min Max Min Max
tAVAV
tELWL
tWC Address Valid to Next Address Valid 70
tCS
Chip Enable Low to Write Enable
Low
0
90
120
ns
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable
High
35
45
50
ns
tDVWH
tDS Input Valid to Write Enable High
30
45
50
ns
tWHDX
tDH
Write Enable High to Input
Transition
0
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable
High
0
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable
Low
20
20
20
ns
tAVWL
tAS Address Valid to Write Enable Low
0
0
0
ns
tWLAX
tAH
Write Enable Low to Address
Transition
45
45
50
ns
tGHWL
Output Enable High to Write
Enable Low
0
0
0
ns
tVCHEL tVCS VCC High to Chip Enable Low
50
50
50
µs
tWHGL
tOEH
Write Enable High to Output
Enable Low
0
0
0
ns
tPHPHH (1,2) tVIDR RP Rise Time to VID
500
500
500
ns
tPLPX
tRP RP Pulse Width
500
500
500
ns
tWHRL (1) tBUSY Program Erase Valid to RB Delay
30
35
50
ns
tPHWL (1) tRSP RP High to Write Enable Low
4
4
4
µs
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Erase Suspend (ES) Instruction. The Block
Erase operation may be suspended by this instruc-
tion which consists of writing the command B0h
without any specific address. No Coded cycles are
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhen the P/E.C. is suspended.The Toggle
bits will stop toggling between 0.1µs and 15µs after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
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