M36W108T データシートの表示（PDF） - STMicroelectronics
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M36W108T
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
M36W108T Datasheet PDF : 35 Pages
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M36W108T, M36W108B
Table 14. DC Characteristics
(TA = 0 to 70°C, –20 to 85°C, –40 to 85°C; VCCF = VCCS = 2.7V to 3.6V)
Symbol
Parameter
Test Condition
Min
Max Unit
ILI Input Leakage Current
0V ≤ VIN ≤ VCCF / VCCS
–1
1
µA
ILO Output Leakage Current
0V ≤ VOUT ≤ VCCF / VCCS
–1
1
µA
ICCF1 Flash Chip Supply Current (Read)
EF = VIL, G = VIH, f = 6MHz,
V ≤ VOUT ≤ VCCF
10
mA
ICCF2 (1) Flash Chip Supply Current (Write)
Program or Erase in progress
20
µA
ICCF3 Flash Chip Supply Current (Stand-by)
EF = VCCF ± 0.2V
100
µA
ICCS1 SRAM Chip Supply Current (Read)
E1S = VIL, E2S = VIH, f= 10MHz
E1S = VIL, E2S = VIH, f= 1MHz
40
mA
10
mA
ICCS2 (1) SRAM Chip Supply Current (Write)
20
mA
ICCS3 SRAM Chip Supply Current (Stand-by)
20
µA
VILF Flash Chip Input Low Voltage
–0.5
0.8
V
VIHF Flash Chip Input High Voltage
0.7 VCCF VCCF + 0.3 V
VILS SRAM Chip Input Low Voltage
–0.3
0.4
V
VIHS SRAM Chip Input High Voltage
2.2
VCCS + 0.3 V
VOLF Flash Chip Output Low Voltage
IOL = 1.8mA
0.45
V
VOHF Flash Chip Output High Voltage
IOH = –100µA
VCCF – 0.4
V
VOLS SRAM Chip Output Low Voltage
IOL = 2.1mA
0.4
V
VOHS SRAM Chip Output High Voltage
IOH = –1.0mA
2.2
V
Note: 1. Sampled only, not 100% tested.
Table 15. Capacitance (1)
(TA = 25 °C, f = 1 MHz)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Note: 1. Sampled only, not 100% tested.
Test Condition
VIN = 0V
VOUT = 0V
Min
Max
Unit
6
pF
12
pF
Table 16. AC Measurement Conditions
Input Rise and Fall Times
≤ 10ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
1.5V
Figure 5. AC Testing Load Circuit
0.8V
1N914
Figure 4. AC Testing Input/Output Waveforms
3V
1.5V
0V
AI01417
DEVICE
UNDER
TEST
3.3kΩ
OUT
CL = 30pF or 100pF
CL includes JIG capacitance
AI01968
15/35
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