M36W108T データシートの表示（PDF） - STMicroelectronics
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M36W108T
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
M36W108T Datasheet PDF : 35 Pages
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M36W108T, M36W108B
Table 18. Flash Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V)
Flash Memory Chip
Symbol
Alt
Parameter
100
CL = 30pF
120
CL = 100pF
Min
Max
Min
Max
tAVAV
tWC Address Valid to Next Address Valid
100
120
tELWL
tCS Chip Enable Low to Write Enable Low
0
0
tWLWH
tWP Write Enable Low to Write Enable High
50
50
tDVWH
tDS Input Valid to Write Enable High
50
50
tWHDX
tDH Write Enable High to Input Transition
0
0
tWHEH
tCH Write Enable High to Chip Enable High
0
0
tWHWL
tWPH Write Enable High to Write Enable Low
30
30
tAVWL
tAS Address Valid to Write Enable Low
0
0
tWLAX
tAH Write Enable Low to Address Transition
50
50
tGHWL
Output Enable High to Write Enable Low
0
0
tVCHEL
tVCS VCC High to Chip Enable Low
50
50
tWHGL
tOEH Write Enable High to Output Enable Low
0
0
tPHPHH (1,2) tVIDR RP Rise Time to VID
500
500
tPLPX
tRP RP Pulse Width
500
500
tWHRL (1) tBUSY Program Erase Valid to RB Delay
90
90
tPHWL (1)
tRSP RP High to Write Enable Low
4
4
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
µs
18/35
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