M36W108T データシートの表示（PDF） - STMicroelectronics
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M36W108T
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
M36W108T Datasheet PDF : 35 Pages
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M36W108T, M36W108B
Table 17. Flash Read AC Characteristics
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V)
Flash Memory Chip
Symbol Alt
Parameter
Test Condition
100
CL = 30pF
120
CL = 100pF
Min Max Min Max
tAVAV
tRC Address Valid to Next Address Valid
EF = VIL, G = VIL 100
120
tAVQV tACC Address Valid to Output Valid
EF = VIL, G = VIL
100
120
tELQX (1) tLZ Chip Enable Low to Output Transition
G = VIL
0
0
tELQV (2) tCE Chip Enable Low to Output Valid
G = VIL
100
120
tGLQX (1)
tOLZ
Output Enabled Low to Output
Transition
EF = VIL
0
0
tGLQV (2) tOE Output Enable Low to Output Valid
EF = VIL
40
50
tEHQX tOH Chip Enable High to Output Transition
G = VIL
0
0
tEHQZ (1) tHZ Chip Enable High to Output Hi-Z
G = VIL
30
30
tGHQX
tOH
Output Enable High to Output
Transition
EF = VIL
0
0
tGHQZ (1) tDF Output Enable High to Output Hi-Z
EF = VIL
30
30
tAXQX tOH Address Transition to Output Transition EF = VIL, G = VIL 0
0
tPLYH
(1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
tPHEL tRH RP High to Chip Enable Low
50
50
tPLPX tRP RP Pulse Width
500
500
tCCR (4)
Chip Enabled Recovery Time
0
0
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of EF without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program Mode.
4. See Flash-SRAM Switching Waveforms.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
16/35
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