M36W108T データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
M36W108T
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
M36W108T Datasheet PDF : 35 Pages
| |||
M36W108T, M36W108B
Table 19. Flash Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V)
Flash Memory Chip
Symbol Alt
Parameter
100
CL = 30pF
120
CL = 100pF
Min
Max
Min
Max
tAVAV
tWC Address Valid to Next Address Valid
100
120
tWLEL
tWS Write Enable Low to Chip Enable Low
0
0
tELEH
tCP Chip Enable Low to Chip Enable High
50
50
tDVEH
tDS Input Valid to Chip Enable High
50
50
tEHDX
tDH Chip Enable High to Input Transition
0
0
tEHWH
tWH Chip Enable High to Write Enable High
0
0
tEHEL
tCPH Chip Enable High to Chip Enable Low
30
20
tAVEL
tAS Address Valid to Chip Enable Low
0
0
tELAX
tAH Chip Enable Low to Address Transition
50
50
tGHEL
Output Enable High Chip Enable Low
0
0
tVCHWL
tVCS VCC High to Write Enable Low
50
50
tEHGL
tOEH Chip Enable High to Output Enable Low
0
0
tPHPHH (1,2) tVIDR RP Rise Time to VID
500
500
tPLPX
tRP RP Pulse Width
500
500
tEHRL (1) tBUSY Program Erase Valid to RB Delay
90
90
tPHWL (1) tRSP RP High to Write Enable Low
4
4
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
µs
20/35
Share Link: