UAA3522HL データシートの表示（PDF） - Philips Electronics

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UAA3522HL

Low power dual-band GSM transceiver with an image rejecting front-end

Philips Electronics 

Philips Semiconductors

Low power dual-band GSM transceiver

with an image rejecting front-end

Objective specification

UAA3522HL

Notes:

1. VCCCPRF, VCCCPIF and VCCPHD must be equal to, or greater than, the other supply voltages. The other supply

voltages must be equal.

2. ‘HIGH-level’ means the control pin voltage must be equal to the supply voltage VCC. ‘LOW-level’ means the control

pin voltage must be equal to the supply ground.

3. ICC(RX) = ICC(RFIF)(RX) + ICCIF(RX) + ICCRF(RX); ICC(TX) = ICCIF(TX) + [ICCRFLO(TX) − ICCRFLO(RX)] + ICCPHD(TX) + ICCRF(TX);

ICC(SYN) = ICCIFLO(SYN) + ICCCPIF(SYN) + ICCPLL(SYN) + ICCCPRF(SYN) + ICCRFLO(SYN).

AC CHARACTERISTICS

All parameters are guaranteed at VCC = 2.8 V; Tamb = 25 °C; unless specified otherwise.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

UNIT

RF receiver section; measured in a 50 Ω impedance system, including external input/output baluns and

matching networks to 50 Ω (see Fig.3)

RF RECEIVER INPUTS (PINS RXIRFA AND RXIRFB)

fi(RF)(GSM)

GSM band RF input

frequency

Ri(dif)

differential input

resistance

Ci(dif)

differential input

capacitance

S11

Pi(spur)

input power matching

level of spurious input

power due to

LO leakage

note 1

925 − 960

−

146 −

−

0.85 −

−

−15 −10

−

−50 −40

MHz

Ω

pF

dB

dBm

RECEIVER IF OUTPUT (PINS RXOIFA AND RXOIFB)

fo(IF)

RL(m)

IF output frequency

matched load

resistance

LO > RF

differential; note 2

Gconv(p)

power conversion gain into specified matched load

resistance; note 1

Gripple

gain ripple

over specified frequency range;

note 3

∆G/∆T

gain variation

note 6

with temperature

F

noise figure

for Ri(dif); notes 1, 3 and 4

CP1

−1 dB input

note 1

compression point

referenced to input

at Tamb = 25 °C

over temperature range

IP3

third-order intercept note 1

point referenced to

input

DES3dB

3 dB desensitization

point referenced to

input

∆fi(RF) = 3 MHz RF input power =

−101 dBm; note 1

−

200 −

−

1−

23 24.5 27

−0.5 − +0.5

−60 −30 −

−

3.45 3.85

−23.5 − −

−24.2 − −

−18 − −

−25 − −

MHz

kΩ

dB

dB

dBm/K

dB

dBm

dBm

dBm

dBm

2000 Feb 18

13

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