UAA3522HL データシートの表示（PDF） - Philips Electronics

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UAA3522HL

Low power dual-band GSM transceiver with an image rejecting front-end

Philips Electronics 

Philips Semiconductors

Low power dual-band GSM transceiver

with an image rejecting front-end

Objective specification

UAA3522HL

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

RF LO buffer; measured and guaranteed on evaluation board

RF LO SOURCE CONNECTED TO PIN RFLOE (see Fig.7)

Ri

Ci

S11

Pi(LO)

input resistance

input capacitance

input power matching

input power acceptable

from the RF LO source

−

50 −

−

1−

−

−15 −10

−7 −3 2

IF LO; measured and guaranteed on evaluation board

EXTERNAL RESONATOR CIRCUIT CONNECTED TO PINS IFLOC AND IFLOE

fosc

oscillation frequency note 1

−

Vosc(peak)

peak voltage excursion VCCIFLO = 2.8 V; see Fig.5

1

limit at IFLOC

(collector)

ϕN

∆fTROFF

phase noise

foffset = 400 kHz; fLO(IF) = 400 MHz −

frequency variation with note 14

−

supply voltage

(pushing)

∆fTRON

frequency variation

−

between RX on and

RX off (pulling)

400 −

− 1.5

− −125

−

1

− 10

IF LO buffer; measured and guaranteed on evaluation board

IF SOURCE CONNECTED TO PIN IFLOE

Ri

Ci

Pi(m)

PIF

input resistance

input capacitance

input power matching

power available from

the IF source

see Fig.5

−

50 −

−

1−

−

−15 −10

−8 −5 −2

RF and IF synthesizer VCOs

REFERENCE FREQUENCY INPUT (PIN REFIN)

fref

Vi(fref)(rms)

reference frequency

input voltage level

(RMS value)

−

13 −

80 − 250

Ri

input resistance

fref = 13 MHz

Ci

input capacitance

−

10 −

−

1−

RF SYNTHESIZER; GSM AND DCS MODES (PINS RXIRFA, RXIRFB AND CPORF)

fLO(RF)

fph(comp)

RF LO frequency

phase comparator

frequency

1040 − 1720

−

200 −

ϕN(GSM)

GSM close-in phase within the closed-loop bandwidth −

noise

Pxtal = 0 dBm; fLO(RF) = 1.1 GHz

−82 −75

UNIT

Ω

pF

dB

dBm

MHz

V

dBc/Hz

MHz/V

kHz

Ω

pF

dB

dBm

MHz

mV

kΩ

pF

MHz

kHz

dBc/Hz

2000 Feb 18

17

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