UAA3522HL データシートの表示（PDF） - Philips Electronics

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UAA3522HL

Low power dual-band GSM transceiver with an image rejecting front-end

Philips Electronics 

Philips Semiconductors

Low power dual-band GSM transceiver

with an image rejecting front-end

Objective specification

UAA3522HL

Notes

1. Measured and guaranteed only on UAA3522 evaluation board.

2. The IF output has open collectors which are supplied via external inductors. External resistors are also needed to

set the output impedance and to match the IF output to the specified load resistance RL (see Fig.3).

3. Value includes losses due to the printed circuit board and balun.

4. Value is guaranteed only for the Pi(LO) typ.

5. For a given RF input power, the value is the difference in the power measured at the IF output when the LNA is

switched on and when it is switched off.

6. This value is guaranteed within the temperature range −10 to +70 °C.

7. Voltage gain is defined as the differential baseband output voltage (either at pins IA/IB or pins QA/QB) divided by the

differential input voltage at pins RXIIFA and RXIIFB.

8. Value refers to differential voltage at pins RXIIFA and RXIIFB (1 kΩ input impedance).

9. Value includes printed circuit board and balun losses.

10. RREFAGC = 18 kΩ, 1%.

11. Guaranteed at Tamb = −30 to +70 °C.

12. With specified LC tuned circuit (33 nH, 15 pF) connected as shown in Fig.4.

13. Defined for the typical input power.

14. Oscillator configured as shown in the evaluation board diagram Fig.7.

handbook, full pagewidth

VCC

50 Ω

LOW

LOSS

BALUN

input port

RXIRFA

RF

RXOIFA

RECEIVER

RXIRFB

RXOIFB

Z = 1 kΩ

BALUN

1 kΩ/50 Ω

RL

50 Ω

output port

FCA047

2000 Feb 18

Fig.3 RF receiver test principle.

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