UAA3522HL データシートの表示（PDF） - Philips Electronics

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UAA3522HL

Low power dual-band GSM transceiver with an image rejecting front-end

Philips Electronics 

Philips Semiconductors

Low power dual-band GSM transceiver

with an image rejecting front-end

Objective specification

UAA3522HL

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

ϕN(DCS)

Vfph(comp)(spur)

Io(cp)

IL(cp)(off)

Vo(cp)

DCS close-in phase

noise

phase comparator

frequency spurii

breakthrough level

charge pump output

current

charge pump leakage

current in off-state

charge pump output

voltage

within the closed-loop bandwidth −

Pxtal = 0 dBm; fLO(RF) = 1.6 GHz

foffset = 200 kHz; second-order loop −

filter closed-loop

bandwidth = 11 kHz

sink or source current; at Vo(cp)

1.8

−5

Io(cp) within specified values

0.4

−79 −74

−75 −60

2.2 2.6

− +5

−

VCC − 0.4

IF SYNTHESIZER (PINS IFLOC, IFLOE AND CPOIF)

fLO(IF)

fph(comp)

ϕN

IF LO frequency

phase comparator

frequency

close-in phase noise

Vfph(comp)(spur)

phase comparator

frequency spurii

breakthrough level

within the closed-loop bandwidth

Pxtal = 0 dBm; fLO(IF) = 400 MHz

foffset = 1 MHz; second order loop

filter closed-loop

bandwidth = 25 kHz

380 400 440

−

1−

−

−95 −85

−

−75 −60

Io(cp)

IL(cp)(off)

Vo(cp)

charge pump output

current

charge pump leakage

current in off-state

charge pump output

voltage

sink or source current; at Vo(cp)

0.75 1.1 1.35

−5 − +5

0.4 −

VCC − 0.4

Frequency dividers

D/DfLO(RF)

D/DfLO(IF)

D/Dfref(RF)

D/Dfref(IF)

RF frequency

programmable divider

ratio

IF frequency

programmable divider

ratio

RF reference frequency fixed ratio

divider ratio

IF reference frequency

divider ratio

5200 − 8600

−

200 −

−

65 −

−

13 −

General IC specification

tON

switch-on time

90% of the final current

−

− 10

UNIT

dBc/Hz

dBc

mA

nA

V

MHz

MHz

dBc/Hz

dBc

mA

nA

V

µs

2000 Feb 18

18

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