BF998 データシートの表示（PDF） - Siemens AG

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BF998

Silicon N Channel MOSFET Tetrode

Siemens AG 

Drain current ID = f (VG1S)

VDS = 8 V

BF 998

Power gain Gps = f (VG2S)

VDS = 8 V, VG1S = 0, IDSS = 10 mA,

f = 200 MHz (see test circuit 1)

Noise figure F = f (VG2S)

VDS = 8 V, VG1S = 0, IDSS = 10 mA,

f = 200 MHz (see test circuit 1)

Power gain Gps = f (VG2S)

VDS = 8 V, VG1S = 0, IDSS = 10 mA,

f= 800 MHz (see test circuit 2)

Semiconductor Group

6

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