BF998 データシートの表示（PDF） - Siemens AG

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BF998

Silicon N Channel MOSFET Tetrode

Siemens AG 

Noise figure F = f (VG2S)

VDS = 8 V, VG1S = 0, IDSS = 10 mA,

f = 800 MHz (see test circuit 2)

BF 998

Gate 1 input admittance y11s

VDS = 8 V, VG2S = 4 V, VG1S = 0,

IDSS = 10 mA (common-source)

Gate 1 forward transfer admittance y 21s

VDS = 8 V, VG2S = 4 V, VG1S = 0

IDSS = 10 mA (common-source)

Output admittance y 22s

VDS = 8 V, VG2S = 4 V, VG1S = 0

IDSS = 10 mA (common-source)

Semiconductor Group

7

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